unisonic technologies co., ltd 4N60-N power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2015 unisonic technologies co., ltd qw-r502-971.b 4a, 600v n-channel power mosfet ? description the utc 4N60-N is a high voltage power mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low on- state resistance and have a high rugged avalanche characteristi cs. this power mosfet is usually used at high speed switching applications in power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) < 2.5 ? @ v gs = 10 v, i d = 2.2a * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggednessa ? symbol
4N60-N power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-971.b ? ordering information ordering number package pin assignment packing lead free halogen free 123456 7 8 4n60l-ta3-t 4n60g-ta3-t to-220 g d s - - - - - tube 4n60l-tf1-t 4n60g-tf1-t to-220f1 g d s - - - - - tube 4n60l-tf2-t 4n60g-tf2-t to-220f2 g d s - - - - - tube 4n60l-tf3t-t 4n60g-tf3t-t to-220f3 g d s - - - - - tube 4n60l-tf3-t 4n60g-tf3-t to-220f g d s - - - - - tube 4n60l-tm3-t 4n60g-tm3-t to-251 g d s - - - - - tube 4n60l-tms-t 4n60g-tms-t to-251s g d s - - - - - tube 4n60l-tms2-t 4n60g-tms2-t to-251s2 g d s - - - - - tube 4n60l-tms4-t 4n60g-tms4-t to-251s4 g d s - - - - - tube 4n60l-tn3-r 4n60g-tn3-r to-252 g d s - - - - - tape reel 4n60l-tnd-r 4n60g-tnd-r to-252d g d s - - - - - tape reel 4n60l-t2q-t 4n60g-t2q-t to-262 g d s - - - - - tube 4n60l-tq2-r 4n60g-tq2-r to-263 g d s - - - - - tape reel 4n60l-tq2-t 4n60g-tq2-t to-263 g d s - - - - - tube - 4n60g-k08-5060-r dfn-8(56) s s s g d d d d tape reel note: pin assignment: g: gate d: drain s: source (1) t: tube, r: tape reel (2) ta3: to-220, tf1: to-220f1, tf2: to-220f2 tf3: to-220f, tf3t: to-220f3, tm3: to-251, tms: to-251s, tms2: to-251s2, tn3: to-252, tms4: to-251s4, tnd: to-252d, t2q: to-262, tq2: to-263, k08-5060: dfn-8(56) (3) l: lead free, g: halogen free and lead free 4n60l -ta3 -t (1)packing type (2)package type (3)green package ? marking package marking to-220 to-220f to-220f1 to-220f2 to-220f3 to-251 to-251s to-251s2 to-251s4 to-252 to-252d to-262 to-263 dfn-8(56)
4N60-N power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-971.b ? pin configuration dfn-8(56)
4N60-N power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-971.b ? absolute maximum ratings (t c = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 4.4 a drain current continuous i d 4.0 a pulsed (note 2) i dm 16 a avalanche energy single pulsed (note 3) e as 260 mj repetitive (note 2) e ar 10.6 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation to-220/to-262/to-263 to-220f/to-220f1 to-220f2/to-220f3 p d 106 w to-251/to-251s to-251s2/to-251s4 to-252/to-252d 50 dfn-8(56) 30 junction temperature t j +150 operating temperature t opr -55 ~ +150 storage temperature t stg -55 ~ +150 notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limit ed by maximum junction temperature 3. l = 30mh, i as = 4a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 4.4a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter package symbol ratings unit junction to ambient to-220/to-262/to-263 ja 62.5 /w to-220f/to-220f1 to-220f3 62.5 to-220f2 62.5 to-251/to-251s to-251s2/to-251s4 to-252/to-252d 110 dfn-8(56) 75 junction to case to-220/to-262/to-263 jc 1.18 /w to-220f/to-220f1 to-220f3 3.47 to-220f2 3.28 to-251/to-251s to-251s2/to-251s4 to-252/to-252d 2.5 dfn-8(56) 4.17
4N60-N power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-971.b ? electrical characteristics (t c =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 600 v drain-source leakage current i dss v ds = 600v, v gs = 0v 10 a gate-source leakage current forward i gss v gs = 30v, v ds = 0v 100 na reverse v gs = -30v, v ds = 0v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25c 0.6 v/ on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10 v, i d = 2.2a 2.1 2.5 ? dynamic characteristics input capacitance c iss v ds = 25v, v gs = 0v, f = 1mhz 530 630 pf output capacitance c oss 70 90 pf reverse transfer capacitance c rss 25 40 pf switching characteristics turn-on delay time t d ( on ) v dd = 300v, i d = 4.0a, r g = 25 ? (note 1, 2) 35 55 ns turn-on rise time t r 70 110 ns turn-off delay time t d ( off ) 190 240 ns turn-off fall time t f 100 130 ns total gate charge q g v ds = 480v,i d = 4.0a, v gs = 10v (note 1, 2) 80 nc gate-source charge q gs 5 nc gate-drain charge q gd 9 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0v, i s = 4.4a 1.4 v maximum continuous drain-source diode forward current i s 4.4 a maximum pulsed drain-source diode forward current i sm 17.6 a reverse recovery time t r r v gs = 0 v, i s = 4.4a, di f /dt = 100 a/ s (note 1) 250 ns reverse recovery charge q rr 1.5 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
4N60-N power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-971.b ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
4N60-N power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-971.b ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
4N60-N power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-971.b utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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